Aluminum doping effects on physical properties of Zno semiconductor for gas sensing

Anis Ul Hassan (20544)

Aluminum doping effects on physical properties of Zno semiconductor for gas sensing - Islamabad (unpublished) 2020 - ix, 86 p. : ill. ; 30 cm. +CD

Submitted in fulfillment of the requirement for the degree of master of Philosophy in physics to the Faculty of Basic Sciences and Humanities. Includes bibliographical references Thesis supervisor: Dr. Amin ur Rahman Thesis co-supervisor: Dr. Nazar Abbas Shah

Thesis (M.Phil)--Riphah International University, 2020


English


Semiconductors--Electrodynamics--Gas sensors--Zinc oxide--Materials--FBSH

537.6226 / ANI
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