Numerical simulation of photovoltaic device with Cu2O as hole transport layer (Record no. 51282)

MARC details
000 -LEADER
fixed length control field 00917nam a22001937a 4500
040 ## - CATALOGING SOURCE
Transcribing agency Riphah International University
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.902
Author Mark SAN
100 ## - MAIN ENTRY--PERSONAL NAME
Authorship Sania Asif (1153)
245 ## - TITLE STATEMENT
Title Numerical simulation of photovoltaic device with Cu2O as hole transport layer
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication Islamabad
Name of publisher (unpublished)
Date of publication 2023
300 ## - PHYSICAL DESCRIPTION
Extent xiv, 62 p.
Illustrations : ill.
Dimensions ; 30 cm.
Accompanying material +CD
500 ## - GENERAL NOTE
General note Submitted in partial fulfillment of requirements for the degree of Master of Philosophy in Physics to the Faculty of Engineering and Applied Sciences.
500 ## - GENERAL NOTE
General note Includes bibliographical references.
500 ## - GENERAL NOTE
General note Thesis supervisor: Dr. M. Farooq Nasir
502 ## - DISSERTATION NOTE
Dissertation note Thesis(M.Phil.)--Riphah International University, 2023
546 ## - LANGUAGE NOTE
Language note English
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Subject Numerical simulation of photovoltage devices
Keywords Simulation methodologies
-- Solar cell simulation
-- Perovskite solar cell
-- Genesis of energy
-- DBS-Physics
-- FEAS
942 ## - ADDED ENTRY ELEMENTS (KOHA)
item type Thesis
Holdings
Not for loan Home library Current library Source of acquisition Full call number Barcode Copy number Koha item type
  Main Campus Main Campus Riphah International University 621.902 SAN 69939 1 Thesis
Copyright © 2026 Riphah International University | System Administrator