Effect of dopant concentration on electrical and magnetic properties of Gd doped (0.5 Ba-0.5 Sr) hexaferrite
Material type:
TextPublication details: Islamabad (unpublished) 2019Description: xii, 69 p. : ill. ; 30 cm. +CDSubject(s): DDC classification: - 621.3815 ARS
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Thesis
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Main Campus | 621.3815 ARS (Browse shelf(Opens below)) | 1 | Not for loan | 50631 |
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| 621.3815 ANA Analysis and design of analog integrated circuits | 621.3815 ANA Analysis and design of analog integrated circuits | 621.3815 ANA Analysis and design of analog integrated circuits | 621.3815 ARS Effect of dopant concentration on electrical and magnetic properties of Gd doped (0.5 Ba-0.5 Sr) hexaferrite | 621.3815 BAK CMOS | 621.3815 BAL Solid-State devices and circuits | 621.3815 BAN Electrical and electronic measurements |
Submitted in fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Faculty of Basic Sciences and Humanities.
Includes bibliographical references.
Thesis supervisor: Prof. Dr. Anwar-ul-Haq
Thesis co-supervisor: Prof. Dr. Muhammad Anis ur Rehman
Thesis (M.Phil.)--Riphah International University, 2019
English
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