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Optoelectronic properties of Eu, Gd and Tb optical transitions in host luminescence NaAIO2 material for optical applications first principle calculation

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Material type: Text

TextPublication details: Islamabad (unpublished) 2021Description: xii, 61 p. : ill., Col., ; 30 cm. +CDSubject(s):

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Dissertation note: Thesis (M.Phil)--Riphah International University, 2021

List(s) this item appears in: FEAS & DBS Thesis I-14 Campus

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Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode
Thesis	Main Campus	537.56 MAR (Browse shelf(Opens below))	1	NOT for LOAN		68365

Previous		No cover image available	No cover image available	No cover image available				Next
Previous	537.534 PRO Propagation of radiowaves	537.5344 NAQ Synthesis and characterization of magnesium doped barium hexaferrites microwaves absorber	537.56 ALI Optoelectronic studies of transition metal ion doped CdS 3D and 2D using density functional theory	537.56 MAR Optoelectronic properties of Eu, Gd and Tb optical transitions in host luminescence NaAIO2 material for optical applications	537.6 GRI Introduction to electrodynamics	537.6 GRI Introduction to electrodynamics	537.6 GRI Introduction to electrodynamics	Next

Submitted in fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Department of Basic Sciences.

Includes bibliographical references

Thesis supervisor: Dr. Sikander Azam

Thesis (M.Phil)--Riphah International University, 2021

English

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