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  <titleInfo>
    <title>Theoretical description for variation in tunneling current of Graphene base vertical transistor having MoS2, WS2 as channel</title>
  </titleInfo>
  <name type="personal">
    <namePart>Haq Nawaz (400852)</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <originInfo>
    <place>
      <placeTerm type="text">Lahore</placeTerm>
    </place>
    <publisher>unpublished</publisher>
    <dateIssued>2018</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <physicalDescription>
    <extent>63 p. : ill ; 30 cm.</extent>
  </physicalDescription>
  <note>includes bibliographical reference.</note>
  <subject>
    <topic>Graphene base Physics</topic>
    <topic>Graphene sensors</topic>
    <topic>Plasmonic devices</topic>
    <topic>Tunneling current</topic>
    <topic>Transition metal</topic>
    <topic>Transistors</topic>
    <topic>MATLAB</topic>
    <topic>RICAS</topic>
  </subject>
  <classification authority="ddc">537.6226 HAQ</classification>
  <recordInfo>
    <recordContentSource authority="marcorg"/>
  </recordInfo>
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