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  <titleInfo>
    <title>Role of gas doping in N-type WSe2 field effect transistor</title>
  </titleInfo>
  <name type="personal">
    <namePart>Muhammad Irshad</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <originInfo>
    <place>
      <placeTerm type="text">Lahore</placeTerm>
    </place>
    <publisher>(unpublished)</publisher>
    <dateIssued>2019</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <physicalDescription>
    <extent>vii, 43 p.  : ill. (col.) ; 30 cm. +CD</extent>
  </physicalDescription>
  <note>In partial fulfillment of the requirements for the degree of Masters of Philosophy in Physics</note>
  <note>Includes references.</note>
  <note>Thesis supervisor: Dr. Muhammad Waqas Iqbal</note>
  <note>Thesis (M.Phil Physics) Riphah International University, 2019</note>
  <note>English</note>
  <subject>
    <topic>Gas doping Physics</topic>
    <topic>Environmental effect</topic>
    <topic>Mechanical exfoliation</topic>
    <topic>Chemical doping</topic>
    <topic>Electronic properties</topic>
    <topic>Raman spectroscopy</topic>
    <topic>Atomic force</topic>
    <topic>Microscopy</topic>
    <topic>WSe2</topic>
    <topic>TMDCs</topic>
    <topic>RICAS</topic>
  </subject>
  <classification authority="ddc">IRS 530</classification>
  <recordInfo>
    <recordContentSource authority="marcorg"/>
  </recordInfo>
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