00974nam a22001937a 4500952012800000999001700128040003600145082001300181100002000194245006300214260003200277300004600309500009800355500002500453500004800478502006600526546001200592650017600604  00104070aLCCbLCCd2019-08-19ePurchased: Riphah international universityl0o530 IRSp39472r2019-08-19 00:00:00t1yTH  c25860d25860  cRiphah International University  bIRSa530  aMuhammad Irshad  aRole of gas doping in N-type WSe2 field effect transistor.  aLahoreb(unpublished)c2019  avii, 43 p. b: ill. (col.)c; 30 cm.e+CD  aIn partial fulfillment of the requirements for the degree of Masters of Philosophy in Physics  aIncludes references.  aThesis supervisor: Dr. Muhammad Waqas Iqbal  aThesis (M.Phil Physics) Riphah International University, 2019  aEnglish  aGas dopingaPhysicsvEnvironmental effectvMechanical exfoliationvChemical dopingvElectronic propertiesvRaman spectroscopyvAtomic forcevMicroscopyvWSe2vTMDCsvRICAS