<?xml version="1.0" encoding="UTF-8"?>
<mods xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.loc.gov/mods/v3" version="3.1" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
  <titleInfo>
    <title>VLSI fabrication principles</title>
    <subTitle>silicon and gallium arsenide</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>Ghandhi, Sorab K.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <originInfo>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>John Wiley &amp; Sons, Inc</publisher>
    <dateIssued>1994</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <physicalDescription>
    <extent>xxiv, 834 p.  : ill.  ; 25 cm.</extent>
  </physicalDescription>
  <note>"A Wiley-Lnterscience publication."</note>
  <subject authority="lcsh">
    <topic>Integrated circuits Gallium arsenide Silicon</topic>
    <topic>Communication control</topic>
    <topic>Crystal growth</topic>
    <topic>Dislocations</topic>
    <topic>Diffusion</topic>
    <topic>Crystal</topic>
    <topic>FEAS</topic>
  </subject>
  <classification authority="ddc">621.38152 GHA</classification>
  <identifier type="isbn">0471580058 (hb)</identifier>
  <recordInfo/>
</mods>
