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  <titleInfo>
    <title>CMOS</title>
    <subTitle>circuit design, layout, and simulation</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>Baker, R. Jacob, Harry W. Li  David E.Boyce</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <originInfo>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>IEEE Press</publisher>
    <dateIssued>1998</dateIssued>
    <issuance>monographic</issuance>
  </originInfo>
  <physicalDescription>
    <extent>xxiv, 902 p.  : ill.  ;24 cm.</extent>
  </physicalDescription>
  <subject authority="lcsh">
    <topic>Metal oxide semiconductors, Complementary</topic>
    <topic>Integrated circuits</topic>
    <topic>Metal oxide semiconductor field-effect transistors</topic>
    <topic>Design and construction</topic>
    <topic>Metal layers</topic>
    <topic>MOSFST</topic>
    <topic>CMOS passive elements</topic>
    <topic>FEAS</topic>
  </subject>
  <classification authority="ddc">621.3815 BAK</classification>
  <identifier type="isbn">0780334167 (pbk)</identifier>
  <recordInfo/>
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