| 000 | 00834nam a22001817a 4500 | ||
|---|---|---|---|
| 999 |
_c25860 _d25860 |
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| 040 | _cRiphah International University | ||
| 082 |
_bIRS _a530 |
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| 100 | _aMuhammad Irshad | ||
| 245 | _aRole of gas doping in N-type WSe2 field effect transistor. | ||
| 260 |
_aLahore _b(unpublished) _c2019 |
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| 300 |
_avii, 43 p. _b: ill. (col.) _c; 30 cm. _e+CD |
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| 500 | _aIn partial fulfillment of the requirements for the degree of Masters of Philosophy in Physics | ||
| 500 | _aIncludes references. | ||
| 500 | _aThesis supervisor: Dr. Muhammad Waqas Iqbal | ||
| 502 | _aThesis (M.Phil Physics) Riphah International University, 2019 | ||
| 546 | _aEnglish | ||
| 650 |
_aGas doping _aPhysics _vEnvironmental effect _vMechanical exfoliation _vChemical doping _vElectronic properties _vRaman spectroscopy _vAtomic force _vMicroscopy _vWSe2 _vTMDCs _vRICAS |
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