| 000 | 00903nam a22002057a 4500 | ||
|---|---|---|---|
| 999 |
_c29801 _d29801 |
||
| 040 | _cRiphah International University | ||
| 082 |
_a537.6226 _bANI |
||
| 100 | _aAnis Ul Hassan (20544) | ||
| 245 | _aAluminum doping effects on physical properties of Zno semiconductor for gas sensing | ||
| 260 |
_aIslamabad _b(unpublished) _c2020 |
||
| 300 |
_aix, 86 p. _b: ill. _c; 30 cm. _e+CD |
||
| 500 | _aSubmitted in fulfillment of the requirement for the degree of master of Philosophy in physics to the Faculty of Basic Sciences and Humanities. | ||
| 500 | _aIncludes bibliographical references | ||
| 500 | _aThesis supervisor: Dr. Amin ur Rahman | ||
| 500 | _aThesis co-supervisor: Dr. Nazar Abbas Shah | ||
| 502 | _aThesis (M.Phil)--Riphah International University, 2020 | ||
| 546 | _aEnglish | ||
| 650 |
_aSemiconductors _vElectrodynamics _vGas sensors _vZinc oxide _vMaterials _vFBSH |
||
| 942 | _cTH | ||