| 000 | 00914nam a22001937a 4500 | ||
|---|---|---|---|
| 999 |
_c55883 _d55883 |
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| 040 | _cRiphah International University | ||
| 082 |
_a530 _bRAM |
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| 100 | _aRameez Razaq (23678) | ||
| 245 |
_aAb- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach _bBandgap engineering |
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| 260 |
_aIslamabad _b(Unpublished) _c2024 |
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| 300 |
_axiii, 38 p. _b: ill. _c; 30 cm. _e+CD |
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| 500 | _aSubmitted in partial fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Department of Basic Sciences. | ||
| 500 | _aIncludes bibliographical references. | ||
| 500 | _aThesis supervisor: Dr. Amin Ur Rahman | ||
| 502 | _aThesis (M.Phil)--Riphah International University, 2024 | ||
| 546 | _aEnglish | ||
| 650 |
_aPhysics _vThomas fermi theory _vGeometry optimization _vEnergy loss _vBand Gap _vDBS _vFEAS |
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| 942 | _cTH | ||