Ab- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach
Rameez Razaq (23678)
Ab- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach Bandgap engineering - Islamabad (Unpublished) 2024 - xiii, 38 p. : ill. ; 30 cm. +CD
Submitted in partial fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Department of Basic Sciences. Includes bibliographical references. Thesis supervisor: Dr. Amin Ur Rahman
Thesis (M.Phil)--Riphah International University, 2024
English
Physics --Thomas fermi theory--Geometry optimization --Energy loss --Band Gap--DBS--FEAS
530 / RAM
Ab- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach Bandgap engineering - Islamabad (Unpublished) 2024 - xiii, 38 p. : ill. ; 30 cm. +CD
Submitted in partial fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Department of Basic Sciences. Includes bibliographical references. Thesis supervisor: Dr. Amin Ur Rahman
Thesis (M.Phil)--Riphah International University, 2024
English
Physics --Thomas fermi theory--Geometry optimization --Energy loss --Band Gap--DBS--FEAS
530 / RAM