Ab- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach (Record no. 55883)

MARC details
000 -LEADER
fixed length control field 00914nam a22001937a 4500
040 ## - CATALOGING SOURCE
Transcribing agency Riphah International University
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 530
Author Mark RAM
100 ## - MAIN ENTRY--PERSONAL NAME
Authorship Rameez Razaq (23678)
245 ## - TITLE STATEMENT
Title Ab- initio investigation of optoelectronic properties for ce doped novel scintillation material cs2LiLaBr6 using GGA+U approach
Sub Title Bandgap engineering
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication Islamabad
Name of publisher (Unpublished)
Date of publication 2024
300 ## - PHYSICAL DESCRIPTION
Extent xiii, 38 p.
Illustrations : ill.
Dimensions ; 30 cm.
Accompanying material +CD
500 ## - GENERAL NOTE
General note Submitted in partial fulfillment of the requirements for the degree of Master of Philosophy in Physics to the Department of Basic Sciences.
500 ## - GENERAL NOTE
General note Includes bibliographical references.
500 ## - GENERAL NOTE
General note Thesis supervisor: Dr. Amin Ur Rahman
502 ## - DISSERTATION NOTE
Dissertation note Thesis (M.Phil)--Riphah International University, 2024
546 ## - LANGUAGE NOTE
Language note English
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Subject Physics
Keywords Thomas fermi theory
-- Geometry optimization
-- Energy loss
-- Band Gap
-- DBS
-- FEAS
942 ## - ADDED ENTRY ELEMENTS (KOHA)
item type Thesis
Holdings
Not for loan Home library Current library Source of acquisition Full call number Barcode Copy number Koha item type
NOT for LOAN Main Campus Main Campus Riphah International University 530 RAM 102630 1 Thesis
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